Semi-insulating InP:Fe for buried-heterostructure strain-compensated quantum-cascade lasers grown by gas-source molecular-beam epitaxy
Identifieur interne : 000558 ( Main/Repository ); précédent : 000557; suivant : 000559Semi-insulating InP:Fe for buried-heterostructure strain-compensated quantum-cascade lasers grown by gas-source molecular-beam epitaxy
Auteurs : RBID : Pascal:13-0288268Descripteurs français
- Pascal (Inist)
- Semiconducteur III-V, Composé III-V, Hétérostructure enterrée, Laser cascade quantique, Laser semiconducteur, Méthode GSMBE, Epitaxie jet moléculaire, Déformation interne, Contrainte traction, Mécanisme croissance, Relaxation, Perfection cristalline, Pastille électronique, Courant seuil, Phosphure d'indium, Fer, Arséniure d'aluminium, Nitrure de calcium, Oxyde de silicium, Densité courant, Propriété thermique, Stabilité thermique, Guide onde, Hétérojonction semiconducteur, InP, Substrat indium phosphure, Substrat InP, AlAs, SiO2, 8115H, 8110A, 6540D.
- Wicri :
- concept : Fer.
English descriptors
- KwdEn :
- Aluminium arsenides, Buried heterostructures, Calcium nitride, Crystal perfection, Current density, GSMBE method, Growth mechanism, III-V compound, III-V semiconductors, Indium phosphide, Internal strains, Iron, Molecular beam epitaxy, Quantum cascade laser, Relaxation, Semiconductor heterojunctions, Semiconductor lasers, Silicon oxides, Tensile stress, Thermal properties, Thermal stability, Threshold current, Wafers, Waveguides.
Abstract
We describe the realization of buried-heterostructure strain-compensated quantum-cascade lasers that incorporate a very high degree of internal strain and are grown on InP substrates using gas-source molecular-beam epitaxy (GSMBE). The active region of the lasers contains AlAs layers up to 1.6 nm thick with 3.7% tensile strain; restricting any post-growth processing to temperatures below 600 C to avoid relaxation. We demonstrate that buried-heterostructure devices can be realized by using GSMBE to over-grow the etched laser ridge with insulating InP:Fe at temperatures low enough to preserve the crystal quality of the strain-compensated active region. Two distinct growth techniques are described, both leading to successful device realization: selective regrowth at 550 °C and non-selective regrowth at 470 C. The resulting buried-heterostructure lasers are compared to a reference laser from the same wafer, but with SiO2 insulation; all three have very similar threshold current densities, operational thermal stability, and waveguide losses.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Semi-insulating InP:Fe for buried-heterostructure strain-compensated quantum-cascade lasers grown by gas-source molecular-beam epitaxy</title><author><name sortKey="Semtsiv, M P" uniqKey="Semtsiv M">M. P. Semtsiv</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Department of Physics, Humboldt University Berlin, Newtonstrasse 15</s1><s2>12489 Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Aleksandrova, A" uniqKey="Aleksandrova A">A. Aleksandrova</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Department of Physics, Humboldt University Berlin, Newtonstrasse 15</s1><s2>12489 Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Elagin, M" uniqKey="Elagin M">M. Elagin</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Department of Physics, Humboldt University Berlin, Newtonstrasse 15</s1><s2>12489 Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Monastyrskyi, G" uniqKey="Monastyrskyi G">G. Monastyrskyi</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Department of Physics, Humboldt University Berlin, Newtonstrasse 15</s1><s2>12489 Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Kischkat, J F" uniqKey="Kischkat J">J.-F. Kischkat</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Department of Physics, Humboldt University Berlin, Newtonstrasse 15</s1><s2>12489 Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Flores, Y V" uniqKey="Flores Y">Y. V. Flores</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Department of Physics, Humboldt University Berlin, Newtonstrasse 15</s1><s2>12489 Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Masselink, W T" uniqKey="Masselink W">W. T. Masselink</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Department of Physics, Humboldt University Berlin, Newtonstrasse 15</s1><s2>12489 Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0288268</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0288268 INIST</idno><idno type="RBID">Pascal:13-0288268</idno><idno type="wicri:Area/Main/Corpus">000829</idno><idno type="wicri:Area/Main/Repository">000558</idno></publicationStmt><seriesStmt><idno type="ISSN">0022-0248</idno><title level="j" type="abbreviated">J. cryst. growth</title><title level="j" type="main">Journal of crystal growth</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium arsenides</term><term>Buried heterostructures</term><term>Calcium nitride</term><term>Crystal perfection</term><term>Current density</term><term>GSMBE method</term><term>Growth mechanism</term><term>III-V compound</term><term>III-V semiconductors</term><term>Indium phosphide</term><term>Internal strains</term><term>Iron</term><term>Molecular beam epitaxy</term><term>Quantum cascade laser</term><term>Relaxation</term><term>Semiconductor heterojunctions</term><term>Semiconductor lasers</term><term>Silicon oxides</term><term>Tensile stress</term><term>Thermal properties</term><term>Thermal stability</term><term>Threshold current</term><term>Wafers</term><term>Waveguides</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Semiconducteur III-V</term><term>Composé III-V</term><term>Hétérostructure enterrée</term><term>Laser cascade quantique</term><term>Laser semiconducteur</term><term>Méthode GSMBE</term><term>Epitaxie jet moléculaire</term><term>Déformation interne</term><term>Contrainte traction</term><term>Mécanisme croissance</term><term>Relaxation</term><term>Perfection cristalline</term><term>Pastille électronique</term><term>Courant seuil</term><term>Phosphure d'indium</term><term>Fer</term><term>Arséniure d'aluminium</term><term>Nitrure de calcium</term><term>Oxyde de silicium</term><term>Densité courant</term><term>Propriété thermique</term><term>Stabilité thermique</term><term>Guide onde</term><term>Hétérojonction semiconducteur</term><term>InP</term><term>Substrat indium phosphure</term><term>Substrat InP</term><term>AlAs</term><term>SiO2</term><term>8115H</term><term>8110A</term><term>6540D</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Fer</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We describe the realization of buried-heterostructure strain-compensated quantum-cascade lasers that incorporate a very high degree of internal strain and are grown on InP substrates using gas-source molecular-beam epitaxy (GSMBE). The active region of the lasers contains AlAs layers up to 1.6 nm thick with 3.7% tensile strain; restricting any post-growth processing to temperatures below 600 C to avoid relaxation. We demonstrate that buried-heterostructure devices can be realized by using GSMBE to over-grow the etched laser ridge with insulating InP:Fe at temperatures low enough to preserve the crystal quality of the strain-compensated active region. Two distinct growth techniques are described, both leading to successful device realization: selective regrowth at 550 °C and non-selective regrowth at 470 C. The resulting buried-heterostructure lasers are compared to a reference laser from the same wafer, but with SiO<sub>2</sub> insulation; all three have very similar threshold current densities, operational thermal stability, and waveguide losses.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-0248</s0></fA01><fA02 i1="01"><s0>JCRGAE</s0></fA02><fA03 i2="1"><s0>J. cryst. growth</s0></fA03><fA05><s2>378</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Semi-insulating InP:Fe for buried-heterostructure strain-compensated quantum-cascade lasers grown by gas-source molecular-beam epitaxy</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>The 17th International Conference on Molecular Beam Epitaxy</s1></fA09><fA11 i1="01" i2="1"><s1>SEMTSIV (M. P.)</s1></fA11><fA11 i1="02" i2="1"><s1>ALEKSANDROVA (A.)</s1></fA11><fA11 i1="03" i2="1"><s1>ELAGIN (M.)</s1></fA11><fA11 i1="04" i2="1"><s1>MONASTYRSKYI (G.)</s1></fA11><fA11 i1="05" i2="1"><s1>KISCHKAT (J.-F.)</s1></fA11><fA11 i1="06" i2="1"><s1>FLORES (Y. V.)</s1></fA11><fA11 i1="07" i2="1"><s1>MASSELINK (W. T.)</s1></fA11><fA12 i1="01" i2="1"><s1>AKIMOTO (Katzuhiro)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>SUEMASU (Takashi)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>OKUMURA (Hajime)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Department of Physics, Humboldt University Berlin, Newtonstrasse 15</s1><s2>12489 Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA15 i1="01"><s1>University of Tsukuba</s1><s3>JPN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA15><fA20><s1>125-128</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13507</s2><s5>354000506550350320</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>14 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0288268</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of crystal growth</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>We describe the realization of buried-heterostructure strain-compensated quantum-cascade lasers that incorporate a very high degree of internal strain and are grown on InP substrates using gas-source molecular-beam epitaxy (GSMBE). The active region of the lasers contains AlAs layers up to 1.6 nm thick with 3.7% tensile strain; restricting any post-growth processing to temperatures below 600 C to avoid relaxation. We demonstrate that buried-heterostructure devices can be realized by using GSMBE to over-grow the etched laser ridge with insulating InP:Fe at temperatures low enough to preserve the crystal quality of the strain-compensated active region. Two distinct growth techniques are described, both leading to successful device realization: selective regrowth at 550 °C and non-selective regrowth at 470 C. The resulting buried-heterostructure lasers are compared to a reference laser from the same wafer, but with SiO<sub>2</sub> insulation; all three have very similar threshold current densities, operational thermal stability, and waveguide losses.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A15H</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A10A</s0></fC02><fC02 i1="03" i2="3"><s0>001B60E40D</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Composé III-V</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>III-V compound</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Compuesto III-V</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Hétérostructure enterrée</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Buried heterostructures</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Laser cascade 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phosphide</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Indio fosfuro</s0><s5>15</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Fer</s0><s2>NC</s2><s5>16</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Iron</s0><s2>NC</s2><s5>16</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Arséniure d'aluminium</s0><s2>NK</s2><s5>17</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Aluminium arsenides</s0><s2>NK</s2><s5>17</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>Nitrure de calcium</s0><s5>18</s5></fC03><fC03 i1="18" i2="X" l="ENG"><s0>Calcium nitride</s0><s5>18</s5></fC03><fC03 i1="18" i2="X" l="SPA"><s0>Calcio nitruro</s0><s5>18</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Oxyde de silicium</s0><s2>NK</s2><s5>19</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Silicon oxides</s0><s2>NK</s2><s5>19</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Densité courant</s0><s5>29</s5></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Current density</s0><s5>29</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>Propriété 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l="FRE"><s0>8115H</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="31" i2="3" l="FRE"><s0>8110A</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="32" i2="3" l="FRE"><s0>6540D</s0><s4>INC</s4><s5>73</s5></fC03><fN21><s1>273</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>MBE2012 International Conference on Molecular Beam Epitaxy</s1><s2>17</s2><s3>Nara JPN</s3><s4>2012-09-23</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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